Active matrix substrate, x-ray sensor device, display device

ABSTRACT

An active matrix substrate of the present invention includes: a first signal line and a second signal line which are aligned in a column direction in which the first signal line and the second signal line extend; a first transistor and a second transistor; and a first electrode and a second electrode, the first signal line being connected via the first transistor to the first electrode, and the second signal line being connected via the second transistor to the second electrode, and the first signal line having a first end which is one of both ends of the first signal line and faces the second signal line, the first end including a tapered part which is tapered toward the second signal line. This makes it possible to prevent a leakage defect from occurring between two signal lines which are aligned in a direction in which the two signal lines extend.

TECHNICAL FIELD

The present invention relates to an active matrix substrate includingtwo signal lines which are aligned in an identical direction in whichthe two signal lines extend.

BACKGROUND ART

According to an active matrix substrate which is used for an x-raysensor device or a display device, in order to achieve high-speeddriving and a reduction in load, a signal line (reading line or dataline) which corresponds to an identical pixel column may be divided intotwo separate signal lines (see Patent Literature 1).

CITATION LIST Patent Literature

Patent Literature 1

Japanese Patent Application Publication, Tokukai, No. 2002-287721

SUMMARY OF INVENTION Technical Problem

In this case, in order to prevent unsatisfactory sensing or display in avicinity of a gap between the two separate signal lines (signal lineswhich are aligned in an identical direction in which the signal linesextend), the gap is desired to be smaller. However, the gap which ismade smaller causes a problem such that the two separate signal linesare easily short-circuited in a production process.

An object of the present invention is to provide an active matrixsubstrate in which a short circuit is prevented from occurring betweensignal lines which are aligned in an identical direction in which thesignal lines extend.

Solution to Problem

An active matrix substrate of the present invention includes: a firstsignal line and a second signal line which are aligned in a columndirection in which the first signal line and the second signal lineextend; a first transistor and a second transistor; and a firstelectrode and a second electrode, the first signal line being connectedvia the first transistor to the first electrode, and the second signalline being connected via the second transistor to the second electrode,and the first signal line having a first end which is one of both endsof the first signal line and faces the second signal line, the first endincluding a tapered part which is tapered toward the second signal line.The configuration makes it possible to prevent an occurrence of a shortcircuit between the first signal line and the second signal line.

Advantageous Effects of Invention

According to the present invention, it is possible to provide an activematrix substrate in which a short circuit is prevented from occurringbetween signal lines which are aligned in an identical direction inwhich the signal lines extend.

BRIEF DESCRIPTION OF DRAWINGS

FIG. 1 is a schematic view which shows a configuration of an x-raysensor device in accordance with the present invention.

FIG. 2 is a plan view which shows a configuration of a part enclosed bya broken line in FIG. 1 (a part of an active matrix substrate).

FIG. 3 is an enlarged view of a part of FIG. 2.

FIG. 4 is a cross-sectional view taken from the line X-X′ of FIG. 3.

FIG. 5 is a cross-sectional view taken from the line Y-Y′ of FIG. 3.

FIG. 6 is a plan view which shows respective specific shapes of a firstend a second end.

FIG. 7 is a plan view which shows an example of how the first end andthe second end are configured (in which example respective rims of thefirst end and the second end are both polygonal lines).

FIG. 8 is a plan view which shows an example of how the first end andthe second end are configured (in which example the respective rims ofthe first end and the second end are both curved lines).

FIG. 9 is a plan view which shows a modified example of FIG. 2.

FIG. 10 is a plan view which shows another modified example of FIG. 2.

FIG. 11 is a plan view which shows an example of how a first end and asecond end are configured (in which example only a rim of either thefirst end or the second end is a polygonal line).

FIG. 12 is a plan view which shows an example of how the first end andthe second end are configured (in which example only the rim of eitherthe first end or the second end is a curved line).

FIG. 13 is a schematic view which shows a configuration of a liquidcrystal display device in accordance with the present invention.

FIG. 14 is a plan view which shows a configuration of a part enclosed bya broken line in FIG. 13 (a part of an active matrix substrate).

FIG. 15 is an enlarged view of a part of FIG. 14.

FIG. 16 is a cross-sectional view taken from the line x-x′ of FIG. 15.

FIG. 17 is a cross-sectional view taken from the line y-y′ of FIG. 15.

FIG. 18 is a plan view which shows a modified example of FIG. 14.

FIG. 19 is a plan view which shows another modified example of FIG. 14.

FIG. 20 is a plan view which shows still another modified example ofFIG. 14.

DESCRIPTION OF EMBODIMENTS

Embodiments of the present invention are described below with referenceto FIG. 1 through FIG. 20. Note that for convenience, a wording of ‘acolumn direction (a direction perpendicular to the column direction is arow direction)’ is used to explain an active matrix substrate. However,the ‘column direction’ may be either a longitudinal direction or atransverse direction in a state in which an x-ray sensor device or aliquid crystal display device is used.

[First Embodiment]

FIG. 1 is a schematic view which shows a configuration of an x-raysensor device of a first embodiment. FIG. 2 is a plan view which shows aconfiguration of a part enclosed by a broken line in FIG. 1 (a part ofan active matrix substrate). FIG. 3 is an enlarged view of a part ofFIG. 2. FIG. 4 is a cross-sectional view taken from the line X-X′ ofFIG. 3. FIG. 5 is a cross-sectional view taken from the line Y-Y′ ofFIG. 3.

An x-ray sensor device 1 s includes an active matrix substrate 3 s, agate driver GD, a first readout driver RD, a second readout driver rd,and a sensor control circuit SCC (see FIG. 1).

The active matrix substrate 3 s has (i) a first region 10 a locatedupstream of a scanning direction and (ii) a second region 10 b locateddownstream of the scanning direction (see FIG. 1). In the first region10 a, a plurality of readout lines (including a readout line 14 a) whichextend in the column direction (scanning direction, longitudinaldirection in FIG. 1) are aligned in the row direction (transversedirection in FIG. 1), and a plurality of scanning lines (including ascanning line 16 a) which extend in the row direction are aligned in thecolumn direction (longitudinal direction in FIG. 1). In the secondregion 10 b, a plurality of readout lines (including a readout line 14b) which extend in the column direction (scanning direction,longitudinal direction in FIG. 1) are aligned in the row direction(transverse direction in FIG. 1), and a plurality of scanning lines(including a scanning line 16 b) which extend in the row direction arealigned in the column direction (longitudinal direction in FIG. 1).

The readout line 14 a and the readout line 14 b which are provided so asto correspond to an identical pixel column are aligned in the columndirection (vertically aligned in FIG. 2) (see FIG. 2). The readout line14 a is connected via a transistor 12 a to a pixel electrode 17 a (firstelectrode), which is a sensing pixel electrode. The readout line 14 b isconnected via a transistor 12 b to a pixel electrode 17 b (secondelectrode), which is a sensing pixel electrode.

More specifically, the transistor 12 a has a gate electrode 16 ag whichis connected to the scanning line 16 a (scanning line located at thebottom of the first region 10 a), a source electrode 6 a which isconnected to the readout line 14 a, and a drain electrode 7 a which isconnected to a drain drawing electrode 27 a that overlaps a retentioncapacitor wire 18 a and is connected via a contact hole 11 a to thepixel electrode 17 a (see FIG. 3). The transistor 12 b has a gateelectrode 16 bg which is connected to the scanning line 16 b (scanningline located at the top of the second region 10 b), a source electrode 6b which is connected to the readout line 14 b, and a drain electrode 7 bwhich is connected to a drain drawing electrode 27 b that overlaps aretention capacitor wire 18 b and is connected via a contact hole 11 bto the pixel electrode 17 b.

The active matrix substrate 3 s is configured as below (see FIG. 3 andFIG. 4). A gate metal which includes the retention capacitor wire 18 band the gate electrode 16 bg of the transistor 12 b is provided on aglass substrate 31. A gate insulating film 21 is provided so as to coverthe gate metal. Semiconductor layers 24 b, 24A, and 24B, and a sourcemetal which includes the readout lines 14 a and 14 b, the drain drawingelectrode 27 b, and the source electrode and the drain electrode of thetransistor 12 b are stacked on the gate insulating film 21. An inorganicinterlayer insulating film 25 and an organic interlayer insulating film26 which is thicker than the inorganic interlayer insulating film 25 arestacked on the source metal. A pixel electrode layer which includes thepixel electrode 17 b is provided on the organic interlayer insulatingfilm 26. An electric charge conversion layer 35 (a structure in which anantimony trisulfide layer 33 and a selenium layer 34 are stacked) isprovided on the pixel electrode layer. Note that the inorganicinterlayer insulating film 25 and the organic interlayer insulating film26 are removed in the contact hole 11 b, so that the pixel electrode 17b and the drain drawing electrode 27 b are in contact with each other.The electric charge conversion layer 35 supplies the pixel electrode 17b with electric charge in accordance with an amount of x-rayirradiation.

Refer to FIG. 1 again. The gate driver GD drives, in accordance with aninstruction from the sensor control circuit SCC, the scanning lines(including the scanning line 16 a) which are provided in the firstregion 10 a and the scanning lines (including the scanning line 16 b)which are provided in the second region 10 b. The first readout driverRD drives, in accordance with the instruction from the sensor controlcircuit SCC, the readout lines (including the readout line 14 a) whichare provided in the first region 10 a. The second readout driver rddrives, in accordance with the instruction from the sensor controlcircuit SCC, the readout lines (including the readout line 14 b) whichare provided in the second region 10 b. More specifically, when thescanning line 16 a is selected, electric charge accumulated in the pixelelectrode 17 a (electric charge in accordance with an amount of x-rayirradiation with respect to the pixel electrode 17 a) is read out viathe transistor 12 a and the readout line 14 a to the first readoutdriver RD. When the scanning line 16 b is selected, electric chargeaccumulated in the pixel electrode 17 b (electric charge in accordancewith an amount of x-ray irradiation with respect to the pixel electrode17 b) is read out via the transistor 12 b and the readout line 14 b tothe second readout driver rd.

According to the first embodiment, an end 30 a which is one of both endsof the readout line 14 a and faces the readout line 14 b has a shapewhich is symmetrical about the row direction, and includes a taperedpart 40 a which is formed in a case where a polygonal line that is apart of a rim of the end 30 a and protrudes toward the readout line 14 bis made up of three sides other than a lower base of an isoscelestrapezoid (a part which is tapered toward the readout line 14 b). An end30 b which is one of both ends of the readout line 14 b and faces thereadout line 14 a has a shape which is symmetrical about the rowdirection, and includes a tapered part 40 b which is formed in a casewhere a polygonal line that is a part of a rim of the end 30 b andprotrudes toward the readout line 14 a is made up of three sides otherthan a lower base of an isosceles trapezoid (a part which is taperedtoward the readout line 14 a). Namely, the end 30 b and the end 30 a arein line symmetry with respect to a line which extends through a centerof a gap between the end 30 a and the end 30 b in the row direction.

According to the first embodiment, the end 30 a of the readout line 14 ais shaped to include the tapered part 40 a and the end 30 b of thereadout line 14 b is shaped to include the tapered part 40 b. Therefore,during a photolithography process for forming the readout lines, lightfrom an opening of a photomask is easily diffracted into a gap regionbetween the readout line 14 a and the readout line 14 b, so that resistresidue due to, for example, insufficient light exposure is less likelyto occur in the gap region. This makes it possible to prevent anoccurrence of a short circuit caused by a resist residue between thereadout line 14 a and the readout line 14 b (If there is a resistresidue, no metal in the gap region is removed, so that these readoutlines are short-circuited). Such an advantage is clear in a case where afirst part of an edge of the pixel electrode 17 b extends along a gapbetween the readout line 14 a and the readout line 14 b and it isimpossible to increase the gap (since the increase in gap causes thepixel electrode 17 b and the other pixel electrodes to greatly differ inparasitic capacitance) (see FIG. 1 and FIG. 2).

Further, according to the first embodiment, since a rim of each of thetapered part 40 a and the tapered part 40 b is made up of three sidesother than a lower base of an isosceles trapezoid, light is obliquelydiffracted into the gap region between the readout line 14 a and thereadout line 14 b from four directions. This effectively prevents anoccurrence of resist residue.

In addition, according to the first embodiment, an influence of aparasitic capacitor defined between the pixel electrode 17 b and thereadout line 14 a is reduced by causing a second part of the edge of theelectrode 17 b which second part extends along the readout line 14 a tohave a smaller length than a third part of the electrode 17 b whichthird part extends along the readout line 14 b.

FIG. 6 is a plan view which shows respective shapes of the end 30 a andthe end 30 b. Note that the rim of the end 30 a is made up of linesindicated by L1, L2, L3, L4, and L5. It is preferable that a distance(d1 in FIG. 6) (a minimum distance between the readout line 14 a and thereadout line 14 b) between a tip of the tapered part 40 a (a part of therim of the tapered part 40 a which part corresponds to an upper base ofthe isosceles trapezoid) and a tip of the tapered part 40 b (a part ofthe rim of the tapered part 40 b which part corresponds to an upper baseof the isosceles trapezoid) be equal to or greater than a distancebetween the source electrode 6 b and the drain electrode 7 b of thetransistor 12 b. This is because during the photolithography process,the gap region between the readout line 14 a and the readout line 14 bis highly likely to be smaller in light exposure (further underexposed)than a gap region between the source electrode 6 b and the drainelectrode 7 b which gap region is subjected to light reflected by thegate electrode 16 bg.

In a case where a part other than the end of each of the readout line 14a and the readout line 14 b has a width (d3 in FIG. 6) of 13 μm, a shortcircuit prevention effect can be obtained by causing the tip of each ofthe tapered part 40 a and the tapered part 40 b to have a width (d2 inFIG. 6) of 11 μm or less, i.e., by decreasing one side (d4 in FIG. 6) ofthe width d3 by 1 μm or more, and d2 is preferably less than half assmall as d3 (if d3=13 μm, d2=5 μm, for example). Also, it is preferablethat a distance (d5 in FIG. 6) between a root of the tapered part 40 aand a root of the tapered part 40 b be equal to or greater than thewidth (d3 in FIG. 6) of the part other than the end of each of thereadout line 14 a and the readout line 14 b.

[Second Embodiment]

An end 30 a and an end 30 b of FIG. 3 may have respective shapes shownin each of (a), (b), and (c) of FIG. 7. Namely, the end 30 a includes atapered part 40 a which is formed in a case where a polygonal line thatis a part of a rim of the end 30 a and protrudes toward the readout line14 b is made up of two sides of a triangle. The end 30 b includes atapered part 40 b which is formed in a case where a polygonal line thatis a part of a rim of the end 30 b and protrudes toward the readout line14 a is made up of two sides of a triangle. Such a configuration issuitable particularly in a case where the pixel electrodes are large insize (in a case where the pixel electrode 17 b and the other pixelelectrodes are less likely to differ in influence of a parasiticcapacitor). As compared to the shapes shown in FIG. 6, the shapes shownin (a), (b), and (c) of FIG. 7 allow more light from an opening of aphotomask to be obliquely diffracted into a gap between the end 30 a andthe end 30 b from four directions, and are greater in short circuitprevention effect.

The end 30 a and the end 30 b may have respective shapes shown in (d) ofFIG. 7. Namely, the end 30 a includes the tapered part 40 a which isformed in a case where a polygonal line that is a part of a rim of theend 30 a and protrudes away from the readout line 14 b is made up of twosides of a triangle. The end 30 b includes the tapered part 40 b whichis formed in a case where a polygonal line that is a part of a rim ofthe end 30 b and protrudes away from the readout line 14 a is made up oftwo sides of a triangle.

The end 30 a and the end 30 b may have respective shapes shown in (e) ofFIG. 7. Namely, the end 30 a includes the tapered part 40 a which isformed in a case where a polygonal line that is a part of a rim of theend 30 a and protrudes away from the readout line 14 b is made up ofthree sides other than a lower base of an isosceles trapezoid. The end30 b includes the tapered part 40 b which is formed in a case where apolygonal line that is a part of a rim of the end 30 b and protrudesaway from the readout line 14 a is made up of three sides other than alower base of an isosceles trapezoid.

The end 30 a and the end 30 b may have respective shapes shown in (a) ofFIG. 8. Namely, the end 30 a includes the tapered part 40 a which isformed in a case where a curved line that is a part of a rim of the end30 a and protrudes toward the readout line 14 b is arc-shaped. The end30 b includes the tapered part 40 b which is formed in a case where acurved line that is a part of a rim of the end 30 b and protrudes towardthe readout line 14 a is arc-shaped.

The end 30 a and the end 30 b may have respective shapes shown in eachof (b) and (c) of FIG. 8. Namely, the end 30 a includes the tapered part40 a which is formed in a case where a curved line that is a part of arim of the end 30 a and protrudes toward the readout line 14 b isquadratic-curve-shaped. The end 30 b includes the tapered part 40 bwhich is formed in a case where a curved line that is a part of a rim ofthe end 30 b and protrudes toward the readout line 14 a isquadratic-curve-shaped.

The end 30 a and the end 30 b may have respective shapes shown in (d) ofFIG. 8. Namely, the end 30 a includes the tapered part 40 a which isformed in a case where a curved line that is a part of a rim of the end30 a and protrudes away from the readout line 14 b is arc-shaped. Theend 30 b includes the tapered part 40 b which is formed in a case wherea curved line that is a part of a rim of the end 30 b and protrudes awayfrom the readout line 14 a is arc-shaped.

The end 30 a and the end 30 b may have respective shapes shown in eachof (e) and (f) of FIG. 8. Namely, the end 30 a includes the tapered part40 a which is formed in a case where a curved line that is a part of arim of the end 30 a and protrudes away from the readout line 14 b isquadratic-curve-shaped. The end 30 b includes the tapered part 40 bwhich is formed in a case where a curved line that is a part of a rim ofthe end 30 b and protrudes away from the readout line 14 a isquadratic-curve-shaped.

In FIG. 2, the gap between the readout line 14 a and the readout line 14b is provided so as to be closer to the scanning line 16 a. However, howto provide the gap is not limited to this. A gap between the readoutline 14 a and the readout line 14 b can also be provided so as to becloser to the scanning line 16 b (provided near a transistor 12 b) (seeFIG. 9).

Further, in FIG. 2, the end 30 a and the end 30 b include the respectivetapered parts. However, how to configure the end 30 a and the end 30 bis not limited to this. Only the end 30 a can include the tapered part40 a (a part which is tapered toward the readout line 14 b) (see FIG.10). Note that the tapered part 40 a is formed in a case where apolygonal line that is a part of a rim of the end 30 a and protrudestoward the readout line 14 b is made up of three sides other than alower base of an isosceles trapezoid. Such a configuration is suitableparticularly in a case where the pixel electrodes are small in size (ina case where the pixel electrode 17 b and the other pixel electrodes arehighly likely to differ in influence of a parasitic capacitor).Similarly, the end 30 a and the end 30 b can be configured as shown in(a) through (e) of FIG. 11 by causing only the end 30 a to include thetapered part 40 a in (a) through (e) of FIG. 7. Further, the end 30 aand the end 30 b can also be configured as shown in (a) through (f) ofFIG. 12 by causing only the end 30 a to include the tapered part 40 a in(a) through (f) of FIG. 8.

[Third Embodiment]

FIG. 13 is a schematic view which shows a configuration of a liquidcrystal display device of a third embodiment. FIG. 14 is a plan viewwhich shows a configuration of a part enclosed by a broken line in FIG.13 (a part of an active matrix substrate). FIG. 15 is an enlarged viewof a part of FIG. 14. FIG. 16 is a cross-sectional view taken from theline x-x′ of FIG. 15. FIG. 17 is a cross-sectional view taken from theline y-y′ of FIG. 15.

A liquid crystal display device 1 d includes an active matrix substrate3 d, a gate driver GD, a first source driver SD, a second source driversd, and a display control circuit DCC (see FIG. 13).

The active matrix substrate 3 d has (i) a first region 10 a locatedupstream of a scanning direction and (ii) a second region 10 b locateddownstream of the scanning direction (see FIG. 13). In the first region10 a, a plurality of data lines (including a data line 15 a) whichextend in the column direction (scanning direction, longitudinaldirection in FIG. 13) are aligned in the row direction (transversedirection in FIG. 13), and a plurality of scanning lines (including ascanning line 16 a) which extend in the row direction are aligned in thecolumn direction (longitudinal direction in FIG. 13). In the secondregion 10 b, a plurality of data lines (including a data line 15 b)which extend in the column direction (scanning direction, longitudinaldirection in FIG. 13) are aligned in the row direction (transversedirection in FIG. 13), and a plurality of scanning lines (including ascanning line 16 b) which extend in the row direction are aligned in thecolumn direction (longitudinal direction in FIG. 13).

The data line 15 a and the data line 15 b which are provided so as tocorrespond to an identical pixel column are aligned in the columndirection (vertically aligned in FIG. 14) (see FIG. 14). The data line15 a is connected via a transistor 12 a to a pixel electrode 17 a (firstelectrode), which is a display pixel electrode. The data line 15 b isconnected via a transistor 12 b to a pixel electrode 17 b (secondelectrode), which is a display pixel electrode.

More specifically, the transistor 12 a has a gate electrode 16 ag whichis connected to the scanning line 16 a (scanning line located at thebottom of the first region 10 a), a source electrode 6 a which isconnected to the data line 15 a, and a drain electrode 7 a which isconnected to a drain drawing electrode 27 a that overlaps a retentioncapacitor wire 18 a and is connected via a contact hole 11 a to thepixel electrode 17 a (see FIG. 14 and FIG. 15). The transistor 12 b hasa gate electrode 16 bg which is connected to the scanning line 16 b(scanning line located at the top of the second region 10 b), a sourceelectrode 6 b which is connected to the data line 15 b, and a drainelectrode 7 b which is connected to a drain drawing electrode 27 b thatoverlaps a retention capacitor wire 18 b and is connected via a contacthole 11 b to the pixel electrode 17 b.

The active matrix substrate 3 d is configured as below (see FIG. 16 andFIG. 17). A gate metal which includes the retention capacitor wire 18 band the gate electrode 16 bg of the transistor 12 b is provided on aglass substrate 31. A gate insulating film 21 is provided so as to coverthe gate metal. Semiconductor layers 24 b, 24A, 24B, and a source metalwhich includes the data lines 15 a and 15 b, the drain drawing electrode27 b, and the source electrode and the drain electrode of the transistor12 b are stacked on the gate insulating film 21. An inorganic interlayerinsulating film 25 and an organic interlayer insulating film 26 which isthicker than the inorganic interlayer insulating film 25 are stacked onthe source metal. A transparent electrode layer (e.g., an ITO) whichincludes the pixel electrode 17 b is provided on the organic interlayerinsulating film 26. An alignment film (not illustrated) is provided onthe transparent electrode layer. Note that the inorganic interlayerinsulating film 25 and the organic interlayer insulating film 26 areremoved in the contact hole 11 b, so that the pixel electrode 17 b andthe drain drawing electrode 27 b are in contact with each other.

Refer to FIG. 13 again. The gate driver GD drives, in accordance with aninstruction from the display control circuit DCC, the scanning lines(including the scanning line 16 a) which are provided in the firstregion 10 a and the scanning lines (including the scanning line 16 b)which are provided in the second region 10 b. The first source driver SDdrives, in accordance with the instruction from the display controlcircuit DCC, the data lines (including the data line 15 a) which areprovided in the first region 10 a. The second source driver sd drives,in accordance with the instruction from the display control circuit DCC,the data lines (including the data line 15 b) which are provided in thesecond region 10 b. More specifically, when the scanning line 16 a isselected, a data signal is written from the first source driver SD viathe transistor 12 a and the data line 15 a to the pixel electrode 17 a.When the scanning line 16 b is selected, a data signal is written fromthe second source driver sd via the transistor 12 b and the data line 15b to the pixel electrode 17 b. The first region 10 a and the secondregion 10 b, which are independently driven, allow the active matrixsubstrate to be driven at double speed.

According to the third embodiment, an end 30 a which is one of both endsof the data line 15 a and faces the the data line 15 b has a shape whichis symmetrical about the row direction, and includes a tapered part 40 awhich is formed in a case where a polygonal line that is a part of a rimof the end 30 a and protrudes toward the data line 15 b is made up ofthree sides other than a lower base of an isosceles trapezoid (a partwhich is tapered toward the data line 15 b). An end 30 b which is one ofboth ends of the data line 15 b and faces the data line 15 a has a shapewhich is symmetrical about the row direction, and includes a taperedpart 40 b which is formed in a case where a polygonal line that is apart of a rim of the end 30 b and protrudes toward the data line 15 a ismade up of three sides other than a lower base of an isosceles trapezoid(a part which is tapered toward the data line 15 a). Namely, the end 30b and the end 30 a are in line symmetry with respect to a line whichextends through a center of a gap between the end 30 a and the end 30 bin the row direction.

According to the third embodiment, the end 30 a of the data line 15 a isshaped to include the tapered part 40 a and the end 30 b of the dataline 15 b is shaped to include the tapered part 40 b. Therefore, duringa photolithography process for forming the data lines, light is easilydiffracted into a gap region between the data line 15 a and the dataline 15 b, so that resist residue is less likely to occur in the gapregion. This makes it possible to prevent an occurrence of a shortcircuit caused by a resist residue between the data line 15 a and thedata line 15 b (If there is a resist residue, no metal in the gap regionis removed, so that these data lines are short-circuited). Such anadvantage is clear in a case where a first part of an edge of the pixelelectrode 17 b extends along a gap between the data line 15 a and thedata line 15 b and it is impossible to increase the gap (since theincrease in gap causes the pixel electrode 17 b and the other pixelelectrodes to greatly differ in parasitic capacitance) (see FIG. 14 andFIG. 15).

Further, according to the third embodiment, since a rim of each of thetapered part 40 a and the tapered part 40 b is made up of three sidesother than a lower base of an isosceles trapezoid, light is obliquelydiffracted into the gap region between the data line 15 a and the dataline 15 b from four directions. This effectively prevents an occurrenceof resist residue.

In addition, according to the third embodiment, an influence of aparasitic capacitor defined between the pixel electrode 17 b and thedata line 15 a is reduced by causing a second part of the edge of theelectrode 17 b which second part extends along the data line 15 a tohave a smaller length than a third part of the electrode 17 b whichthird part extends along the data line 15 b.

[Fourth Embodiment]

An end 30 a and an end 30 b which are illustrated in FIG. 14 can beconfigured as shown in FIG. 7 and FIG. 8.

In FIG. 14, a gap between a data line 15 a and a data line 15 b isprovided so as to be closer to a scanning line 16 a. However, how toprovide the gap is not limited to this. A gap between the readout line14 a and the readout line 14 b can also be provided so as to be closerto the scanning line 16 b (provided near a transistor 12 b) (see FIG.18). Note that in order to cover the transistor 12 b (block light) witha black matrix which is provided on a counter substrate (color filtersubstrate), it is also possible to provide the gap between the data line15 a and the data line 15 b so that the gap overlaps the black matrixwhich covers the transistor 12 b (to block light by covering the gapwith the black matrix).

In FIG. 14, the end 30 a and the end 30 b include the respective taperedparts. However, how to configure the end 30 a and the end 30 b is notlimited to this. Only the end 30 a can include a tapered part 40 a (apart which is tapered toward the data line 15 b) (see FIG. 19). Notethat the tapered part 40 a is formed in a case where a polygonal linethat is a part of a rim of the end 30 a and protrudes toward the dataline 15 b is made up of three sides other than a lower base of anisosceles trapezoid. Similarly, the end 30 a and the end 30 b can beconfigured as shown in FIG. 11 and FIG. 12.

In FIG. 14 through FIG. 17, in order to increase an aperture ratio, anedge of a pixel electrode 17 b overlaps the data line 15 a, the dataline 15 b, and the scanning line 16 b. However, how to configure theedge of the pixel electrode 17 b is not limited to this. The edge of thepixel electrode 17 b can also extend along the data line 15 a, the dataline 15 b, and the scanning line 16 b (see FIG. 20).

As described earlier, an active matrix substrate of the presentinvention includes: a first signal line and a second signal line whichare aligned in a column direction in which the first signal line and thesecond signal line extend; a first transistor and a second transistor;and a first electrode and a second electrode, the first signal linebeing connected via the first transistor to the first electrode, and thesecond signal line being connected via the second transistor to thesecond electrode, and the first signal line having a first end which isone of both ends of the first signal line and faces the second signalline, the first end including a tapered part which is tapered toward thesecond signal line.

The configuration makes it possible to prevent an occurrence of a shortcircuit between the first signal line and the second signal line.

The active matrix substrate of the present invention can be configuredsuch that a part of an edge of the second electrode extends along oroverlap a gap between the first signal line and the second signal line.

The active matrix substrate of the present invention can be configuredsuch that a part of an edge of the second electrode extends along oroverlap the first signal line.

The active matrix substrate of the present invention can be configuredsuch that a minimum distance between the first signal line and thesecond signal line is equal to or greater than a distance between asource electrode and a drain electrode of the first transistor.

The active matrix substrate of the present invention can be configuredsuch that the first end has a shape which is symmetrical about a rowdirection.

The active matrix substrate of the present invention can be configuredsuch that the tapered part is formed by causing a part of a rim of thefirst end to have a shape of a polygonal line which protrudes toward thesecond signal line.

The active matrix substrate of the present invention can be configuredsuch that the tapered part is formed by causing a part of a rim of thefirst end to have a shape of a polygonal line which protrudes away fromthe second signal line.

The active matrix substrate of the present invention can be configuredsuch that the shape of the polygonal line is made up of three sidesother than a lower base of an isosceles trapezoid.

The active matrix substrate of the present invention can be configuredsuch that the shape of the polygonal line is made up of two sides of atriangle.

The active matrix substrate of the present invention can be configuredsuch that the tapered part is formed by causing a part of a rim of thefirst end to have a shape of a curved line which protrudes toward thesecond signal line.

The active matrix substrate of the present invention can be configuredsuch that the tapered part is formed by causing a part of a rim of thefirst end to have a shape of a curved line which protrudes away from thesecond signal line.

The active matrix substrate of the present invention can be configuredsuch that the curved line is arc-shaped.

The active matrix substrate of the present invention can be configuredsuch that the curved line is quadratic-curve-shaped.

The active matrix substrate of the present invention can be configuredsuch that a second end which is one of both ends of the second signalline and faces the first signal line includes a tapered part which istapered toward the first signal line.

The active matrix substrate of the present invention can be configuredsuch that the second end and the first end are in line symmetry withrespect to a line which extends through a gap between the first end andthe second end in a row direction.

The active matrix substrate of the present invention can be configuredsuch that the first electrode and the second electrode are sensingelectrodes.

The active matrix substrate of the present invention can be configuredsuch that the first electrode and the second electrode are displayelectrodes.

An x-ray sensor device includes an active matrix substrate mentionedabove.

A display device includes an active matrix substrate mentioned above.

The present invention is not limited to the description of theembodiments above, but may be altered by a skilled person within thescope of the claims. An embodiment based on a proper combination oftechnical means disclosed in different embodiments is encompassed in thetechnical scope of the present invention.

INDUSTRIAL APPLICABILITY

A display device of the present invention is suitable for, for example,a radiation detector (e.g., an x-ray sensor device) and a large-sizedhigh-definition display device (e.g., a television receiver, a digitalsignage, or a medical monitor).

REFERENCE SIGNS LIST

1 s X-ray sensor device

1 d Liquid crystal display device

3 s, 3 d Active matrix substrate

16 a Scanning line (first scanning line)

16 b Scanning line (second scanning line)

17 a Pixel electrode (first electrode)

17 b Pixel electrode (second electrode)

12 a Transistor (first transistor)

12 b Transistor (second transistor)

14 a Readout line (first signal line)

14 b Readout line (second signal line)

15 a Data line (first signal line)

15 b Data line (second signal line)

30 a End (of readout line 14 a or data line 15 a)

30 b End (of readout line 14 b or data line 15 b)

40 a Tapered part (of end 30 a)

40 b Tapered part (of end 30 b)

The invention claimed is:
 1. An active matrix substrate comprising: afirst signal line and a second signal line which are aligned in a columndirection in which the first signal line and the second signal lineextend; a first transistor and a second transistor; and a firstelectrode and a second electrode, wherein the first signal line beingconnected via the first transistor to the first electrode, and thesecond signal line being connected via the second transistor to thesecond electrode; the first signal line having a first end which is oneof both ends of the first signal line and faces the second signal line,the first end including a tapered part which is tapered toward thesecond signal line; and a minimum distance between the first signal lineand the second signal line is equal to or greater than a distancebetween a source electrode and a drain electrode of the firsttransistor.
 2. The active matrix substrate according to claim 1, whereinthe first electrode and the second electrode are sensing electrodes. 3.An x-ray sensor device comprising an active matrix substrate recited inclaim
 2. 4. The active matrix substrate according to claim 1, whereinthe first electrode and the second electrode are display electrodes. 5.A display device comprising an active matrix substrate recited in claim4.
 6. An active matrix substrate comprising: a first signal line and asecond signal line which are aligned in a column direction in which thefirst signal line and the second signal line extend; a first transistorand a second transistor; and a first electrode and a second electrode,wherein the first signal line being connected via the first transistorto the first electrode, and the second signal line being connected viathe second transistor to the second electrode; the first signal linehaving a first end which is one of both ends of the first signal lineand faces the second signal line, the first end including a tapered partwhich is tapered toward the second signal line; and the tapered part isformed by causing a part of a rim of the first end to have a shape of apolygonal line: (i) which protrudes toward the second signal line, or(ii) which protrudes away from the second signal line.
 7. The activematrix substrate according to claim 6, wherein the shape of thepolygonal line is made up of three sides other than a lower base of anisosceles trapezoid.
 8. The active matrix substrate according to claim6, wherein the shape of the polygonal line is made up of two sides of atriangle.
 9. The active matrix substrate according to claim 6, whereinthe first electrode and the second electrode are sensing electrodes. 10.The active matrix substrate according to claim 6, wherein the firstelectrode and the second electrode are display electrodes.
 11. The Anactive matrix substrate , comprising: a first signal line and a secondsignal line which are aligned in a column direction in which the firstsignal line and the second signal line extend; a first transistor and asecond transistor; and a first electrode and a second electrode, whereinthe first signal line being connected via the first transistor to thefirst electrode, and the second signal line being connected via thesecond transistor to the second electrode; the first signal line havinga first end which is one of both ends of the first signal line and facesthe second signal line, the first end including a tapered part which istapered toward the second signal line; and the tapered part is formed bycausing a part of a rim of the first end to have a shape of a curvedline: (i) which protrudes toward the second signal line, or (ii) whichprotrudes away from the second signal line.
 12. The active matrixsubstrate according to claim 11, wherein the curved line is arc-shaped.13. The active matrix substrate according to claim 11, wherein thecurved line is quadratic-curve-shaped.
 14. The active matrix substrateaccording to claim 11, wherein the first electrode and the secondelectrode are sensing electrodes.
 15. The active matrix substrateaccording to claim 11, wherein the first electrode and the secondelectrode are display electrodes.
 16. An active matrix substrate,comprising: a first signal line and a second signal line which arealigned in a column direction in which the first signal line and thesecond signal line extend; a first transistor and a second transistor;and a first electrode and a second electrode, wherein the first signalline being connected via the first transistor to the first electrode,and the second signal line being connected via the second transistor tothe second electrode; the first signal line having a first end which isone of both ends of the first signal line and faces the second signalline, the first end including a tapered part which is tapered toward thesecond signal line; and a second end which is one of both ends of thesecond signal line and faces the first signal line includes a taperedpart which is tapered toward the first signal line.
 17. The activematrix substrate according to claim 16, wherein the second end and thefirst end are in line symmetry with respect to a line which extendsthrough a gap between the first end and the second end in a rowdirection.
 18. The active matrix substrate according to claim 16,wherein the first electrode and the second electrode are sensingelectrodes.
 19. The active matrix substrate according to claim 16,wherein the first electrode and the second electrode are displayelectrodes.